Transient annealing for the production of n+ contact layers in GaAs
- 31 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3), 440-444
- https://doi.org/10.1016/0378-4363(85)90619-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Beam annealing of semiconductor materialsPhysics in Technology, 1984
- AlN capped annealing of Se and Sn implanted semi-insulating GaAsElectronics Letters, 1983
- Transient annealing of selenium-implanted gallium arsenide using a graphite strip heaterApplied Physics Letters, 1982
- Transient annealing of ion implanted GaAsMicroelectronics Journal, 1982