Even-Parity Levels of Donors in Si
- 23 November 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (21), 1490-1492
- https://doi.org/10.1103/PhysRevLett.25.1490
Abstract
Fifteen excited "even-parity" levels of donor impurities in Si are identified. Observed photoexcitation to these levels in violation of electric-dipole selection rules is attributed to effects of polarization of the donor by other defects and to breakdown of the effective-mass approximation.Keywords
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