Properties of liquid-phase-deposited SiO2 films for interlayer dielectrics in ultralarge-scale integrated circuit multilevel interconnections
- 1 September 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 249 (1), 15-21
- https://doi.org/10.1016/0040-6090(94)90079-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A Selective SiO2 Film‐Formation Technology Using Liquid‐Phase Deposition for Fully Planarized Multilevel InterconnectionsJournal of the Electrochemical Society, 1993
- SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related EffectsJournal of the Electrochemical Society, 1992
- Film Characteristics of APCVD Oxide Using Organic Silicon and OzoneJapanese Journal of Applied Physics, 1991
- Formation of silicon dioxide films in acidic solutionsApplied Surface Science, 1991
- Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide FilmsJournal of the Electrochemical Society, 1990
- A New Process for Silica CoatingJournal of the Electrochemical Society, 1988
- Fabrication of fluorine-doped silica glasses by the sol-gel methodJournal of Non-Crystalline Solids, 1988
- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965