Electrolyte-oxide-semiconductor junction at the p-InP/V 2+-V 3+ interface

Abstract

Voltammetric measurements show that a thin passivating film exists at the p‐InP/V²⁺‐V³⁺ electrolyte interface, which allows efficient minority‐carrier collection via tunneling. An electrolyte‐oxide‐semiconductor energy band diagram is presented that explains the properties of the p‐InP/V²⁺‐V³⁺, 4‐M HCl/C solar cell.