Creation and saturation of light-induced defects in a-Si:H
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 91-94
- https://doi.org/10.1016/0022-3093(87)90021-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Annealing of metastable defects in hydrogenated amorphous siliconPhysical Review B, 1986
- Light-induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon filmsJournal of Applied Physics, 1986
- Effects of deposition temperature and hydrogen evolution on light-induced defects in a-Si:HJournal of Non-Crystalline Solids, 1985
- The Role of Hydrogen in the Staebler-Wronski Effect of a-Si:HJapanese Journal of Applied Physics, 1985
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Raman Study on the Silicon Network of Hydrogenated Amorphous Silicon Films Deposited by a Glow DischargeJapanese Journal of Applied Physics, 1985