Formation of β-SiC layers on heated silicon wafers exposed to sublimed carbon
- 1 November 1981
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 85 (2), L191-L193
- https://doi.org/10.1016/0040-6090(81)90631-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Measurement of Film Thickness from Lattice Absorption BandsJournal of the Electrochemical Society, 1973
- Surface Characteristics and Electrical Conduction of β-SiC Films Formed by Chemical ConversionJournal of Vacuum Science and Technology, 1970
- Chemical Processes in SiC Formation by Reactive Deposition and Chemical ConversionJournal of Applied Physics, 1969
- β-Silicon Carbide FilmsJournal of the Electrochemical Society, 1969
- THE GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICONApplied Physics Letters, 1967
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959