Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium
- 1 December 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13), 4687-4693
- https://doi.org/10.1063/1.1708118
Abstract
Gallium arsenide has been grown on germanium using arsenic trichloride and gallium. With optimum growth conditions the epitaxial layers have properties close to those of good‐quality bulk crystals. Comparison between epitaxial and bulk crystals is made in terms of the widths of the x‐ray rocking curves and of the properties of p‐n junctions formed within the epitaxial layer.Keywords
This publication has 20 references indexed in Scilit:
- Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germaniumPhilosophical Magazine, 1965
- Vapor Phase Transport and Epitaxial Growth of GaAs[sub 1?x]P[sub x] Using Water VaporJournal of the Electrochemical Society, 1965
- Miscibility of III-V Semiconductors Studied by Flash EvaporationJournal of Applied Physics, 1964
- Structure of Oriented, Vapor-Deposited GaAs Films, Studied by Electron DiffractionJournal of Applied Physics, 1964
- Epitaxial Growth of Gallium Arsenide on Germanium SubstratesJournal of the Electrochemical Society, 1964
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964
- Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge HeterojunctionsJournal of the Electrochemical Society, 1964
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964
- Epitaxial Growth of Homogeneous Solid Solutions of GaAs-GaPJournal of the Electrochemical Society, 1964
- Preparation of Epitaxial GaAs and GaP Films by Vapor Phase ReactionJournal of the Electrochemical Society, 1962