On amorphous layer formation in silicon by ion implantation
- 1 January 1974
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 22 (3), 205-208
- https://doi.org/10.1080/10420157408230781
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Localized Defects in SemiconductorsPublished by Springer Nature ,1973
- On silicon amorphization during different mass ion implantationRadiation Effects, 1973
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- Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1971
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969
- CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICONApplied Physics Letters, 1969
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968