Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)
- 1 October 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (10B), L1214
- https://doi.org/10.1143/jjap.37.l1214
Abstract
GaN films were grown on a silica glass substrate by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). It was found that GaN films grown on silica glass exhibited stronger photoluminescence (PL) intensity than that exhibited by GaN films grown on sapphire substrates and the PL peak position was the near-band-edge emission of hexagonal GaN. In addition, the full-width at half maximum of the PL spectrum for GaN grown on silica glass was smaller than that of GaN grown on sapphire. GaN films grown on silica glass were c-oriented polycrystalline films consisting of columnar domains. It is believed that c-axis orientation and columnar growth are strongly related to the optical properties.Keywords
This publication has 5 references indexed in Scilit:
- The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)Journal of Crystal Growth, 1998
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass SubstratesJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- High-power InGaN single-quantum-well-structure blue and violet light-emitting diodesApplied Physics Letters, 1995
- Improvements of electrical and optical properties of GaAs by substrate bias application during electron-cyclotron-resonance plasma-excited molecular beam epitaxyApplied Physics Letters, 1989