New Resonant Tunneling Diode with a Deep Quantum-Well
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A), L786
- https://doi.org/10.1143/jjap.25.l786
Abstract
A new resonant tunneling diode has been fabricated by employing an In0.1Ga0.9As strained layer quantum-well, where its conduction band edge is lower than that of emitter and collector regions. The obtained peak-current voltage is reduced to about 150 mV, which is less than half of that for the diode with a GaAs quantum-well. The high peak-to-valley ratio of 13 is observed at 77 K. This suggests that the peak-current voltage for this structure could be controlled by changing indium composition of the In y Ga1-y As quantum-well, while retaining a large peak-to-valley ratio.Keywords
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