Resonant tunneling transistors with controllable negative differential resistances
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (12), 636-638
- https://doi.org/10.1109/edl.1985.26258
Abstract
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quantum well are presented and analyzed theoretically. Each proposed device consists of a resonant tunneling double barrier heterostructure integrated with a Schottky barrier field-effect transistor configuration. The essential feature of these devices is the presence, in their output current-voltage (I_{D} - V_{D}) curves, of negative differential resistances controlled by a gate voltage. Because of the high-speed characteristics associated with tunnel structures, these devices could find applications in tunable millimeter-wave oscillators, negative resistance amplifiers, and high-speed digital circuits.Keywords
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