High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm
- 15 November 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (10), 854-856
- https://doi.org/10.1063/1.90212
Abstract
We report In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50–70% without antireflection coating. The short‐ and long‐wavelength response limits of these very efficient detectors can be compositionally tuned to lie anywhere in the wavelength range 0.9<λ<1.7 μm.Keywords
This publication has 8 references indexed in Scilit:
- The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μmApplied Physics Letters, 1978
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Quaternary alloy InxGa1−xAsyP1−y/InP photodetectorsApplied Physics Letters, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- An InGaAs detector for the 1.0–1.7-μm wavelength rangeApplied Physics Letters, 1978
- A simple measurement of absolute solar-cell efficiencyJournal of Applied Physics, 1977
- InxGa1−xAsyP1−y/InP heterojunction photodiodesApplied Physics Letters, 1977
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974