Preparation and electrical properties of InPxOy gate insulators on InP
- 3 February 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5), 375-377
- https://doi.org/10.1063/1.96557
Abstract
A new insulating film, InPxOy, has been deposited in an indirect plasma‐enhanced low‐pressure chemical vapor deposition system for use as a gate dielectric layer on InP. In this system the oxygen is excited in an rf plasma chamber which is separated from the deposition chamber to avoid radiation damage to the InP surfaces. Triethylindium (TEI) and PH3 were used as sources for indium and phosphorus, respectively. A two‐zone furnace was employed in which PH3 was decomposed in the high‐temperature (800 °C) zone, whereas deposition was carried out in the low‐temperature (300 °C) zone. The electrical properties of the deposited films are dependent, to a large extent, upon the ratio of TEI vapor to PH3 during deposition. The resistivities range from 1013 to 1015 Ω cm. Fast interface state densities as determined from capacitance‐voltage (C‐V) measurements of layers deposited on n‐type InP substrates exhibit minima as low as 1010 cm−2 eV−1. The hysteresis in the high‐frequency C‐V curves was as low as 0.2 V, indicating that the densities of the slow states were reduced to a very low level due, probably, to the structural compatibility between the deposited layer and the InP substrates.Keywords
This publication has 10 references indexed in Scilit:
- Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Electrical properties of Al2O3 and AlPxOy dielectric layers on InPThin Solid Films, 1984
- The effect of interfacial traps on the stability of insulated gate devices on InPJournal of Applied Physics, 1983
- Traps at the deposited insulator-InP interface— a discussion of a possible causeThin Solid Films, 1983
- Indirect plasma deposition of silicon dioxideJournal of Vacuum Science and Technology, 1982
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching TechniqueJapanese Journal of Applied Physics, 1980
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFETJapanese Journal of Applied Physics, 1980
- A D.C. to 16 GHz indium phosphide MISFETSolid-State Electronics, 1980
- Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.Electronics Letters, 1979
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962