Defect Characterization of GaAs on Si Grown by MOCVD
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12R), 2441
- https://doi.org/10.1143/jjap.28.2441
Abstract
Defects in GaAs grown on a Si substrate with various intermediate layers by metalorganic chemical vapor deposition were studied. In the two-step growth method, the EPD (etch pit density) and the X-ray FWHM (full width at half maximum) decrease with increasing growth temperature. The lowest EPD of GaAs grown at 800°C on Si by the two-step growth method is 3.6×107 cm-2. When an Al x Ga1-x P intermediate layer is used, both the EPD and the X-ray FWHM of GaAs on Si decrease with increasing x and have minima at about x=0.5 because the growth mode of Al x Ga1-x P changes from three-dimensional to two-dimensional. The EPD becomes smaller when GaP/GaAsP and GaAsP/GaAs SLS's are grown directly on GaP, and is about 2×107 cm-2. A further reduced EPD, 3×106 cm-2, was obtained by in-situ thermal-cycle annealing.Keywords
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