Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure
- 1 August 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (3), 1309-1312
- https://doi.org/10.1063/1.349587
Abstract
Radiation effects on cubic silicon carbide (3C‐SiC) metal‐oxide‐semiconductor (MOS) structures have been studied with high‐frequency capacitance‐voltage measurements. It was found that interface traps are generated at the 3C‐SiC/SiO2 interface and oxide‐trapped charges are built up in the oxide by 60Co gamma‐ray irradiation. The generation of the interface traps and the oxide‐trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.Keywords
This publication has 21 references indexed in Scilit:
- Radiation induced defects in CVD-grown 3C-SiCIEEE Transactions on Nuclear Science, 1990
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Low-Temperature Heteroepitaxy of β-SiC on Si (111) SubstratesMRS Proceedings, 1988
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- Electrical Properties of 3C-SiC and its application to FETMRS Proceedings, 1987
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance TechniqueMRS Proceedings, 1985
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiCJapanese Journal of Applied Physics, 1984
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962