Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A), L434
- https://doi.org/10.1143/jjap.27.l434
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966