Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5), 203-204
- https://doi.org/10.1109/55.690
Abstract
Performance of a GaAs power MESFET has been improved significantly by incorporating a pulse-doped InGaAs layer in the GaAs n-channel. InGaAs provides electron transport properties superior to those of GaAs. The doping level of the GaAs layer can be very high, making it a very-high-transconductance device. Moreover, the conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; therefore, the power gain of the FET is significantly improved. The resulting device delivered a power density of 0.6 W/mm with 14% power-added efficiency and 3.5-dB gain at 60 GHz. At a gain of 5.1 dB, power density was 0.4 W/mm.Keywords
This publication has 4 references indexed in Scilit:
- GaAs power MESFET with 41-percent power-added efficiency at 35 GHzIEEE Electron Device Letters, 1988
- Advances in HEMT Technology and ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sIEEE Electron Device Letters, 1986
- Millimeter-wave GaAs FET's prepared by MBEIEEE Electron Device Letters, 1985