A novel tool for mapping composition distributions in semiconductor microstructures—application to InxGa1−xP quantum wires
- 2 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (9), 1072-1074
- https://doi.org/10.1063/1.120968
Abstract
A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150 Å) In x Ga 1−x P multiquantum wire array grown via a strain-induced laterally ordered process.Keywords
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