Optical studies of misfit strain effects in GaxIn1−xP epitaxial layers on (001) GaAs substrates
- 15 May 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (10), 5188-5190
- https://doi.org/10.1063/1.340379
Abstract
The effect of interfacial elastic strain due to lattice mismatch in GaxIn1−xP layers grown on (001) GaAs substrates by atmospheric pressure metalorganic vapor‐phase epitaxy has been studied by photoluminescence and photoluminescence excitation spectroscopy. Strong excitonic features have been observed in the 2‐K excitation spectra. They provide the first direct observation of the valence‐band splitting due to the misfit strain in accordance with theoretical calculations.Keywords
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