Preparation of multilayered thin silicon-on-insulator structure by low-energy oxygen ion implantation
- 28 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (13), 1543-1545
- https://doi.org/10.1063/1.107490
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Formation of thin silicon films using low energy oxygen ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- SIMOX: Buried layer formation by ion implantation — Equipment and techniquesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial GrowthJapanese Journal of Applied Physics, 1981