Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs
- 18 July 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (8), 579-582
- https://doi.org/10.1109/led.2005.852741
Abstract
Quantum-mechanical (QM), or carrier energy-quantization, effects on the subthreshold characteristics, including the threshold voltage (V/sub t/), of generic undoped double-gate (DG) CMOS devices with ultrathin (Si) bodies (UTBs) are physically modeled. The analytic model, with dependences on the UTB thickness (t/sub Si/), the transverse electric field, and the UTB surface orientation, shows how V/sub t/ is increased, and reveals that 1) the subthreshold carrier population in higher-energy subbands is significant, 2) the QM effects in DG devices with {110}-Si surfaces, common in FinFETs, are comparable to those for {100}-Si surfaces for t/sub Si/>/spl sim/4 nm, 3) the QM effects can increase the gate swing, and (iv) the QM effects, especially for t/sub Si/</spl sim/4 nm in nMOSFETs with {110}-Si surfaces and in pMOSFETs, will strongly influence DG CMOS design and scalability.Keywords
This publication has 10 references indexed in Scilit:
- On the Feasibility of Nanoscale Triple-Gate CMOS TransistorsIEEE Transactions on Electron Devices, 2005
- High-Performance P-Type Independent-Gate FinFETsIEEE Electron Device Letters, 2004
- Quantum mechanical effects on double-gate MOSFET scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETsIEEE Transactions on Electron Devices, 2002
- Double-gate CMOS: symmetrical- versus asymmetrical-gate devicesIEEE Transactions on Electron Devices, 2001
- A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effectsIEEE Transactions on Electron Devices, 1999
- Principles of Quantum MechanicsPublished by Springer Nature ,1994
- Self-consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfacesJournal of Applied Physics, 1986
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972