Electron-phonon quantum kinetics in pulse-excited semiconductors: Memory and renormalization effects
- 15 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (8), 5435-5447
- https://doi.org/10.1103/physrevb.50.5435
Abstract
The carrier dynamics in photoexcited semiconductors is studied in a quantum kinetic approach based on the density-matrix formalism. Besides the memory effects related to the energy-time uncertainty, we discuss interference effects between different types of interactions describing the fact that a transition due to one interaction occurs between states, which are renormalized by other interactions. We first analyze the relaxation process in a one-band model, which allows us to concentrate on memory effects in the electron-phonon interaction. We then extend the model to a two-band semiconductor interacting with a short laser pulse, which is more realistic due to the explicit treatment of the carrier generation process. Here we discuss, in particular, the role of renormalization effects. It turns out that these effects reduce the broadening due to the non-Markovian dynamics and lead to distribution functions, which are more similar to the semiclassical case; the positions of the peaks, however, exhibit slight time-dependent shifts. On the other hand, phonon quantum beats in the decay of the interband polarization are increased by these renormalization effects.Keywords
This publication has 35 references indexed in Scilit:
- Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamicsPhysical Review B, 1992
- Analysis of coherent and incoherent phenomena in photoexcited semiconductors: A Monte Carlo approachPhysical Review Letters, 1992
- Interaction of ultrashort light pulses with semiconductors: Effective Bloch equations with relaxation and memory effectsPhysical Review B, 1991
- Two-band density-matrix approach to nonlinear optics of excitonsPhysical Review B, 1989
- Self-consistent study of the resonant-tunneling diodePhysical Review B, 1989
- RPA-dynamics of the electronic density matrix in a two-band semiconductorZeitschrift für Physik B Condensed Matter, 1988
- Effective Bloch equations for semiconductorsPhysical Review B, 1988
- Nonequilibrium theory of the optical Stark effect and spectral hole burning in semiconductorsPhysical Review B, 1988
- Collective Excitations and the Dynamical Stark Effect in a Coherently Driven Exciton SystemPhysical Review Letters, 1986
- Weak localization in thin filmsPhysics Reports, 1984