Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
- 15 September 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (6), 2854-2857
- https://doi.org/10.1063/1.346417
Abstract
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm. The peak current density of 4.2 kA cm−2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.Keywords
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