Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a-Si:H diodes by photoemission with synchrotron radiation
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9), 887-889
- https://doi.org/10.1063/1.94967
Abstract
The Pd/SiOx/a‐Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence‐band discontinuity and the built‐in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.Keywords
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