Pd/a-Si:H metal-insulator-semiconductor Schottky barrier diode for hydrogen detection
- 1 June 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11), 964-965
- https://doi.org/10.1063/1.93815
Abstract
Hydrogenated amorphous silicon (a‐Si:H), produced by the glow‐discharge technique, has been used to construct very low cost, high quality metal‐insulator‐semiconductor structures where palladium has been utilized as catalytic metal for hydrogen detection. With this device, hydrogen concentration in hydrogen‐nitrogen mixture as low as 100 ppm has been detected. There is indication that the ultimate limit is much lower.Keywords
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