Electrical properties of as-grown Hg1−xCdxTe epitaxial layers

Abstract

The Hall coefficient and resistivity of Hg_1−xCd_xTe epitaxial layers with 0.195<xx=0.30 show that as‐grown epitaxial layers are p type, with a carrier concentration and mobility on the order of 1.2×10¹⁶ cm⁻³ and 400 cm²/V s, respectively. The acceptor ionization energy determined by the Hall measurements is found to change with the energy gap of Hg_1−xCd_xTe . The electrical parameters and compositional uniformity (Δx=±0.001) of the epilayer for x=0.30 indicate that the material is comparable to the best reported bulk Hg_1−xCd_xTe single crystal.