GaAs surface passivation by deposition of an ultrathin InP-related layer
- 19 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3), 379-381
- https://doi.org/10.1063/1.110049
Abstract
A few‐atomic‐layer deposition of InP‐related compounds on a GaAs surface greatly improves the surface properties. Tenfold enhancement in the photoluminescence intensity is observed at the GaAs band edge, which indicates a reduction in the surface recombination. Relaxation of the surface pinning, which results in photoluminescence intensity enhancement, is observed by x‐ray photoelectron spectroscopy. Based on the results, we propose a novel concept of surface passivation by atomic‐layer deposition, where the surface band structure of GaAs is modulated by the ultrathin strained layer.Keywords
This publication has 14 references indexed in Scilit:
- Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1989
- Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flatteningApplied Physics Letters, 1989
- Effect of sodium sulfide treatment on band bending in GaAsApplied Physics Letters, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Passivation of the GaAs surface by an amorphous phosphorus overlayerApplied Physics Letters, 1984
- Passivation of GaAs surfaces*Journal of Electronic Materials, 1983
- Effects of H2S adsorption on surface properties of GaAs {100} grown i n s i t u by MBEJournal of Vacuum Science and Technology, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974