Picosecond photoresponse in 3He+ bombarded InP photoconductors

Abstract

³He⁺ bombardment is shown to be an effective means of achieving free‐carrier lifetimes as short as 1 ps in Fe‐doped InP without compromising the dark resistance of the photoconductor. Autocorrelation measurements demonstrate that these bombarded photoconductors operate as sampling gates with 2‐ps sampling apertures and millivolt sensitivity. They exhibit a 10–90% decay time of 30 ps when used as pulse generators; we attribute this behavior to imperfect contacts.