Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substrates
- 31 October 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (3), 654-658
- https://doi.org/10.1016/0022-0248(82)90390-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Vapor-phase growth of (In,Ga)(As,P) quaternary alloysIEEE Journal of Quantum Electronics, 1981
- LPE growth of 1.3 μm InGaAsP CW lasers on (110) InP substratesElectronics Letters, 1981
- InGaAsP quaternary alloys: Composition, refractive index and lattice mismatchJournal of Electronic Materials, 1980
- Vapor-phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substratesApplied Physics Letters, 1979
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968