Vapor-phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8), 603-605
- https://doi.org/10.1063/1.91223
Abstract
Effects of InP substrate orientation on InxGa1−xAs vapor‐phase epitaxial growth are studied. The fractional composition x of the grown layer on (100) substrate is smaller than for (111) B at identical growth temperatures and gas flow rates. The In content x decreases with increasing temperature. Growth rate, carrier concentration, and carrier mobility depend on substrate orientation. Growth on (100) substrates at temperatures above 710°C is suitable for obtaining smooth surface layers with low carrier concentration and high mobility.Keywords
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