Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6), 643-645
- https://doi.org/10.1063/1.95341
Abstract
Spatially resolved electrical and spectroscopic behavior around isolated grown-in dislocation in p-type undoped GaAs crystals grown by liquid-encapsulated Czochralski technique is investigated. Surface spreading resistance is found to remarkably increase at about 100 μm in diameter around dislocations. In a corresponding area, photoluminescence intensity of the 1.49-eV and 1.44-eV acceptor level peaks decreases. However, that of 0.8-eV deep level peak does not vary. These results demonstrate that dislocations should give rise to carrier density variation due to the relative concentration change of levels around them.Keywords
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