Progress in ion projection lithography
- 31 March 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 17 (1-4), 229-240
- https://doi.org/10.1016/0167-9317(92)90047-u
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Silylation of focused ion beam exposed resistsApplied Physics Letters, 1991
- Ion projection lithography process on dry resistNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Electron-beam cell projection lithography: A new high-throughput electron-beam direct-writing technology using a specially tailored Si apertureJournal of Vacuum Science & Technology B, 1990
- Low distortion, large area ion beam proximity printing for GaAs field effect transistors and monolithic microwave integrated circuitsJournal of Vacuum Science & Technology B, 1990
- New approach to projection-electron lithography with demonstrated 0.1 μm linewidthApplied Physics Letters, 1990
- Ion projection lithography machine IPLM-01: A new tool for sub-0.5-micron modification of materialsJournal of Vacuum Science & Technology B, 1986
- Ion beam exposure profiles in PMMA–computer simulationJournal of Vacuum Science and Technology, 1981
- Basic technology for VLSI (part II)IEEE Transactions on Electron Devices, 1980
- Recent advances in electron-beam lithography for the high-volume production of VLSI devicesIEEE Transactions on Electron Devices, 1979
- Electron-projection microfabrication systemJournal of Vacuum Science and Technology, 1975