Substrate sensitivity of dissociative electron attachment to physisorbed aniline
- 14 November 1997
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 279 (3-4), 223-229
- https://doi.org/10.1016/s0009-2614(97)01026-9
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Molecularly Adsorbed Oxygen Species on Si(111)-(7×7): STM-Induced Dissociative Attachment StudiesScience, 1996
- Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2OSurface Science, 1996
- Electron Stimulated Desorption of H2from Chemisorbed Molecular MonolayersThe Journal of Physical Chemistry, 1996
- Effect of the Condensed Phase on Dissociative Electron Attachment:Condensed on a Kr SurfacePhysical Review Letters, 1995
- Substrate dependence of electron-stimulated O− yields from dissociative electron attachment to physisorbed O2The Journal of Chemical Physics, 1994
- Formation of anionic excitations in the rare-gas solids and their coupling to dissociative states of adsorbed moleculesPhysical Review B, 1993
- Electronic aging and related electron interactions in thin-film dielectricsIEEE Transactions on Electrical Insulation, 1993
- Post-dissociation interactions in ESD: The 18O−C16O surface reactions induced by 4–10 eV electronsChemical Physics Letters, 1990
- Absolute cross section for dissociative electron attachment incondensed on Kr filmPhysical Review Letters, 1990
- Ion-molecule surface reactions induced by slow (5–20 eV) electronsPhysical Review Letters, 1987