Auger recombination in InGaN measured by photoluminescence

Abstract

The Auger recombination coefficient in quasi-bulk In x Ga 1 − x N ( x ∼ 9 % – 15 % ) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4 × 10 − 30 to 2.0 × 10 − 30 cm 6 s − 1 . The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green In Ga N ∕ Ga N (0001) quantum welllight-emitting diodes(LEDs), is the reason why the maximum external quantum efficiency in these devices is observed at very low current densities. Thus, Auger recombination is the primary nonradiative path for carriers at typical LED operating currents and is the reason behind the drop in efficiency with increasing current even under room-temperature (short-pulsed, low-duty-factor) injection conditions.