Elimination of the beam effect on channeling dips of bismuth implanted in silicon
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3), 191-194
- https://doi.org/10.1016/0029-554x(80)91252-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Displacement of group III, IV, V, and VI impurities in Si by the analyzing beamNuclear Instruments and Methods, 1978
- Channeling studies of ion-implanted siliconRadiation Effects, 1973
- Lattice Location by Channeling Angular Distributions: Bi Implanted in SiPhysical Review B, 1972
- Channeling measurements in As-doped SiJournal of Applied Physics, 1972
- Critical angles of Sb and Bi implanted SiPhysics Letters A, 1971
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967