Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy
- 11 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15), 1249-1251
- https://doi.org/10.1063/1.99171
Abstract
The fabrication and current‐voltage characteristics of the first depletion‐mode field‐effect transistors based on a pseudomorphic ZnSe/n‐GaAs heterointerface are described. The devices are doped‐channel field‐effect transistors produced by means of interrupted growth with the use of two separate molecular beam epitaxy systems. Very strong (visible to the naked eye) reflection high‐energy electron diffraction intensity oscillations persist for 120 periods when ZnSe is nucleated on the GaAs epilayer. The current‐voltage characteristics of the transistors are close to ideal; channel modulation indicates that the Fermi level is not pinned at the ZnSe/GaAs interface.Keywords
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