The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 518-523
- https://doi.org/10.1016/0022-0248(87)90446-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1985
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1981
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- Spin Exchange in Excitons, the Quasicubic Model and Deformation Potentials in II-VI CompoundsPhysical Review B, 1970
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963