Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by molecular beam epitaxy
- 31 March 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (2), 393-396
- https://doi.org/10.1016/0022-0248(83)90377-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Very low current threshold GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1979
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasersApplied Physics Letters, 1974