Chloride vapor phase epitaxial growth of high-purity GaInP
- 24 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (12), 770-772
- https://doi.org/10.1063/1.96716
Abstract
High-purity GaInP alloy was grown by chloride vapor phase epitaxy (Ga/In/PCl3/H2 system) with two separate metal source regions. The alloy composition could be precisely controlled by using separate regions for Ga and In metals. From the photoluminescence and Hall effect analysis, epitaxial layers lattice matched to GaAs substrates showed high emission efficiency, the full width at half-maximum of the free-exciton luminescence was as narrow as 7.4 meV at 77 K (3.8 meV at 4.2 K), and the low impurity concentration was below 1.5×1015 cm−3.Keywords
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