Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- 1 July 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (7A), L429
- https://doi.org/10.1143/jjap.22.l429
Abstract
InGaAsP/InGaP double heterostructures have been grown on GaAs(100) substrates by low pressure metalorganic chemical vapor deposition. We have carried out a lasing experiment with a cleaved sample of ∼200 µm width by optical pumping. At high excitation levels, we have observed a stimulated emission of a wavelength of 717 nm at 150 k. The threshold power density is estimated to be about 4.5×104 W/cm2 at this temperature. We also mention the room-temperature lasing operation of similar double heterostructure samples.Keywords
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