Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (1), 8-11
- https://doi.org/10.1109/edl.1985.26024
Abstract
The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET's is clarified by experimentally determining where along the channel the SiO2is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET's, and by hot-electron injection in nMOSFET's.Keywords
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