Structure-enhanced MOSFET degradation due to hot-electron injection
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (3), 71-74
- https://doi.org/10.1109/edl.1984.25836
Abstract
Device degradation due to channel hot-electron injection in several nonconventional MOSFET structures including minimum-overlap gate, offset gate, graded drain, and lightly doped drain (LDD) structures are evaluated. In these nonconventional structures the device degradation is much faster than that in conventional devices when biased with the same amount of hot electrons in the channel. This faster degradation rate is proposed to be due to external channel pinchoff at the more lightly doped drain edge. This behavior implies even more severe constraints on the operating regime for these nonconventional device structures at submicrometer gatelengths to maintain adequate reliability margins.Keywords
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