Protection du GaAs, Ga1-xAlxAs et GaAs1-xPx par du nitrure d'aluminium déposé par pulvérisation réactive
- 1 December 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 47 (3), 327-333
- https://doi.org/10.1016/0040-6090(77)90048-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Comparison of Group IV and VI Doping by Implantation in GaAsJournal of the Electrochemical Society, 1975
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Heat treatment of ion implanted GaAsRadiation Effects, 1974
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972