Low temperature MBE growth of high quality AlGaAs
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 164-168
- https://doi.org/10.1016/0022-0248(87)90385-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- State-of-the-art AlGaAs alloys by antimony dopingJournal of Applied Physics, 1986
- Interface disorder in GaAs/AlGaAs quantum wells grown by MBESurface Science, 1986
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlatticesJournal of Applied Physics, 1986
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Electron Activation Energy in Si-Doped AlGaAs Grown by MBEJapanese Journal of Applied Physics, 1984
- Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982