Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7), 1607-1613
- https://doi.org/10.1109/16.141225
Abstract
Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5- mu m) films were integrated onto 3-in Pt/Ti/SiO/sub 2//Keywords
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