A ferroelectric DRAM cell for high-density NVRAMs
- 1 October 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (10), 454-456
- https://doi.org/10.1109/55.62994
Abstract
The operation of a ferroelectric DRAM (dynamic random access memory) cell for nonvolatile RAM (NVRAM) applications is described. Because polarization reversal only occurs during nonvolatile store/recall operations and not during read/write operations, ferroelectric fatigue is not a serious endurance problem. For a 3-V power supply, the worst-case effective silicon dioxide thickness of the unoptimized lead zirconate titanate film studied is less than 17 AA. The resistivity and endurance properties of ferroelectric films can be optimized by modifying the composition of the film. This cell can be the basis of a very-high-density NVRAM with practically no read/write cycle limit and at least 10/sup 10/ nonvolatile store/recall cycles.<>Keywords
This publication has 6 references indexed in Scilit:
- Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrical conduction and breakdown in sol-gel derived PZT thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988
- Preparation of Pb(Zr,Ti)O3 thin films by sol gel processing: Electrical, optical, and electro-optic propertiesJournal of Applied Physics, 1988
- Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuitsIEEE Electron Device Letters, 1988
- A non-volatile memory cell based on ferroelectric storage capacitorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987