Fast Cu(In,Ga)Se2 precursor growth: Impact on solar cell
- 19 January 2011
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 519 (21), 7221-7223
- https://doi.org/10.1016/j.tsf.2011.01.098
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migrationActa Materialia, 2010
- Solar cell efficiency tables (version 36)Progress In Photovoltaics, 2010
- Cu(In,Ga)Se2 thin films grown with a Cu‐poor/rich/poor sequence: growth model and structural considerationsProgress In Photovoltaics, 2003
- Rapid growth of thin Cu(In,Ga)Se2 layers for solar cellsThin Solid Films, 2003
- Growth of Cu(In,Ga)Se 2 thin films by coevaporation using alkaline precursorsThin Solid Films, 2000
- Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition MonitorJapanese Journal of Applied Physics, 1995