Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition
- 5 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14), 1054-1056
- https://doi.org/10.1063/1.98789
Abstract
We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits cw operation with a low, 20 mA threshold current and a high external differential quantum efficiency of 40% at room temperature. Measurements have also shown a small-signal frequency response of 10 GHz due to an extremely small parasitic capacitance of 3.5 pF.Keywords
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