Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon

Abstract

Bismuth titanate (Bi4Ti3OI2) is one of the well known ferroelectrics which exhibits switchable spontaneous polarization in all directions.l,2 Because of its high Curie temperature of 675 °C and high breakdown strength, it has high potential for device applications. Some attempts have been reported regarding the integration of bismuth titanate into silicon MOSFETS for the implementation of non-volatile memories with limited success.3,4 In addition to this, bismuth titanate has a relatively high dielectric constant.5 Recently, there is tremendous interest in using these high dielectric constant materials for storage capacitors in dynamic random access memory applications (DRAM), and as gate insulators to increase the transconductance of MOSFETS.6-8 Therefore, in this paper we are presenting the results of metal—bismuth titanate- p—Si capacitors for device applications as a high dielectric constant material.