An NMOS comparator for a bubble memory
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 16 (6), 689-694
- https://doi.org/10.1109/JSSC.1981.1051663
Abstract
A low-noise low-offset comparator was designed for a bubble memory system. The measured noise performance was 25 /spl mu/V rms or 13 nV//spl radic/Hz and the worst case offset voltage was determined to be 158 /spl mu/V. This results in a 1.30 mV comparator gray region.Keywords
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